https://www.weebit-nano.com/wp-content/uploads/2017/11/6A860411_W...

https://www.weebit-nano.com/wp-content/uploads/2017/11/6A860411_WBT.pdf

It says:
14 Nov, 2017 – Weebit Nano (ASX: WBT), an Israel-based semiconductor company that is seeking to develop the next generation of memory technology, is pleased to report promising preliminary evaluation results of endurance and data retention measurement on 4Kb (Kilo Bit) arrays on 300nm cells. These results successfully conclude the 300nm 4Kb characterisation.
The characterisation measurement was performed on 300nm 4Kb memory array cell structures under a variety of temperature and duration conditions at 150°C, 200°C and 260°C, monitoring the ability of the ReRAM cells to maintain their resistivity levels within industry acceptable ranges. The 260°C temperature is of great importance as it is the temperature used when soldering chipsets into printed circuit boards. Weebit Nano’s 4Kb array maintained its programmed data after 30 minutes at 260°C, exceeding the soldering requirement of 15 minutes at this temperature and allowing several soldering cycles.

Question is: Would the same technical characterisation be applicable to the 40nm 1MB memory array cells?