LPDDR4X V wbt reram siox, page-9

lppdr4x ram is volatile RAM, with dual data paths. It cant retain a charge but can sustain many many writes and reads for that reason, and do so very quickly.

NAND 0r NOR Flash is non-volatile (as is tape and disk). But, it has exceedingly slow writes and relatively slow reads, degrades over time with multiple writes and is not very robust. That said, its advent has revolutionised storage by bringing a more structured hierarchy to storage since its much faster than disk. But if you look at say an SSD device, there is software to fairly distribute writes to maximise wear and a whole bunch of other strategies to minimise failure.

Now in embedded systems, there is a need for close non-volatile storage near the compute. And that is particularly the case for some newer uses like AI where there is a need for scratch space and training knowledge that should sustain turning off. Unfortunately this also implies more overworked Flash memory and hence potential failure of the whole device.

So, there is a need for a non-volatile memory that is faster than FLASH, can be easily integrated in embedded systems like FLASH, can sustain many more writes and reads, faster, be more stable, and be easily produced. Reram has that promise.

SiOx reram may be the easiest to make and integrate. Its substitutability for FLASH in the fabrication line may just be its biggest advantage because if a line can change over and be making new better memory quicker then that is a big drawcard.