Here is the direct link to Ian Mann's presentation in SFOLink to...

Here is the direct link to Ian Mann's presentation in SFO

Link to Photonics West Conference in San Francisco

Interesting that BLG see that 1st off the block will be replacement of the ITO (Indium Tin Oxide - a semi transparent conduction) used to dissipate the the conductive contact on p-GaN (which has a high resistivity) by a more light transparent tunnel junction grown by RPCVD and the contact then being nGaN (which is far more conductive than pGaN)
This to be followed by cascaded LEDs (with interleaving tunnel junctions).  Both involve buried pGaN which exploits the inherent RPCVD attribute that buried Mg (used in the pGaN) does not need to be annealed (to get rid of the hydrogen which is part of the MOCVD process - ammonia is NH₃)