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4DS-HGST-WDC-IMEC, page-14

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    Filamentary uses considerably more power than nonfilamentary(4DS) because for filamentary cell to be excited into one of its state needs electrical current to be passed trough the cell whilst the non filamentary needs only electrical field( like field transistors- or MOSFET-s) so many many times less power is needed to run non filamentary ReRAM. The reset time,power, consumption, reliability ALL better than the filamentary
 
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