Here you go - this is happening4DS Memristor achieves technical...

Here you go - this is happening

4DS Memristor achieves technical milestone of memory cells denser than 3D flash with commerciallization in the 2019 timeframe
https://www.nextbigfuture.com/2016/10/4ds-memristor-achieves-technical.html

4DS claims its 40-nanometer ReRAM is a first, but many other labs besides 4DS and Crossbar are known for serious ReRAM efforts using memristors including Adesto Technologies, Elpida, Fujitsu, Global Foundries, Hewlett Packard, Hynix, IBM, Macronix, Nanya, NEC, Panasonic, Rambus, SanDisk, Samsung, Sharp, Sony, ST Microelectronics, Winbond, and several research-only labs like Imec collaborating with foundry partners like TSMC.

Flash is reaching the end of its ability to scale linearly, prompting the move to 3D, such as Samsung’s, Toshiba’s and Western Digital’s recent demonstrations of 64-layer stacked-die flash memories...

Any license agreement that is non-exclusive would see 4DS receiving multiple up-front, oneoff license payments, which could amount to several millions of dollars each. Additionally, 4DS would receive royalties per chip sold once the technology goes into commercial production. Memory chip royalties typically amount to a single digit percentage of the sales price of the chip.

An exclusive license to use 4DS’ technology would likely require the licensee to pay a substantially larger up-front license fee, potentially several tens of millions of dollars, in 4DS’ view, in addition to royalties once the chip goes into commercial production....

Interface Switching ReRAM – high density memory for mobile and cloudThe development of Interface Switching ReRAM, a unique type of Non-Filamentary ReRAM, represents a breakthrough in ReRAM technology and is unique to 4DS.

4ds non-filamentary reram is better than crossbar filamentary reram
https://crossbar-inc.com/assets/resources/videos/270p/whiteboard.mp4 

Filamentary ReRAM – low density memory for IoT and connected devicesThe formation of filaments is the most common approach in ReRAM cell research and development today.Filamentary mechanisms may work well at relatively large cell geometries but pose significant current density, retention, endurance, access and control problems when trying to achieve gigabyte range memories.Filamentary ReRAM has inherent scaling limitations because cell currents are high and are independent of cell size. High switching currents are needed for long data retention and the large current fluctuations typically observed in filament-based ReRAM. The potential for scalability to smaller geometries is limited by wire current densities.Furthermore, the create and destruct switching mechanism in filamentary ReRAM results in eventual cell breakdown and poses a number of significant limitations for GB silicon storage.




4DS is pioneering Interface Switching ReRAM, a unique area-based ReRAM technology best positioned for Storage Class Memory in mobile devices and cloud data centers.





An innovative non-volatile memory technology that could scale further and perform better than flash memory and resistive RAM (ReRAM) technologies has attracted the interest of processor licensor ARM Holdings plc (Cambridge, England), according to Carlos Paz de Araujo, a professor at the University of Colorado who is the leading advocate for development of the memory.

https://electronics360.globalspec.com/article/3996/arm-support-claimed-for-non-filamentary-reram