LPDDR4X V wbt reram siox, page-12

Not an unfair comment. I guess the only metrics, and they haven't been extensive, are the results of the smaller cells. These parameters can be optimised by tweaking the production processes and that's what WBT are doing at the moment. Realistically, I assume that the announcements state the best case scenarios and there might be reductions in some parameters when scaling from 1 megabit to Say to a terrabyte. 

At my last reading flash does not scale any lower than 40nm, and 3d flash is essentially stackimg discrete dies on top of each other. From what we're told  ReRam, wbt's and 4ds, scales to much smaller process nodes / geometries allowing much higher densities and lower power consumption. As well as being manufacturable in a true 3d process. Also, if the final product was just 50x faster we're still in game changer territory. 

Again, obviously we're only going off what the company has told us, and will only really know if we have a chip in our hands.